savantic semiconductor product specification silicon npn power transistors 2SC2591 2sc2592 d escription with to-220 package complement to type 2sa1111/1112 good linearity of h f e high v ceo applications for audio frequency, high power amplifiers application pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(t c =25) symbol parameter conditions value unit 2SC2591 150 v cbo collector- base voltage 2sc2592 open emitter 180 v 2SC2591 150 v ceo collector- emitter voltage 2sc2592 open base 180 v v ebo emitter-base voltage open collector 5 v i c collector current 1 a i cm collector current-peak 1.5 a p c collector power dissipation t c =25 20 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC2591 2sc2592 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2SC2591 150 v (br)ceo collector-emitter breakdown voltage 2sc2592 i c =0.1ma ,i b =0 180 v v ebo emitter- base breakdown voltage i e =10a ,i c =0 5 v v ce (sat) collector-emitter saturation voltage i c =0.5a; i b =50ma 0.5 2.0 v v be (sat) base-emitter saturation voltage i c =0.5a; i b =50ma 1.0 2.0 v i cbo collector cut-off current v cb =120v; i e =0 1 a i ebo emitter cut-off current v eb =4v; i c =0 1 a h fe-1 dc current gain i c =150ma ; v ce =10v 90 330 h fe-2 dc current gain i c =500ma ; v ce =5v 50 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 20 pf f t transition frequency i c =50ma ; v ce =10v 200 mhz h fe-1 classifications q r s 90-155 130-220 185-330
savantic semiconductor product specification 3 silicon npn power transistors 2SC2591 2sc2592 package outline fig.2 outline dimensions(unindicated tolerance: 0.10 mm)
savantic semiconductor product specification 4 silicon npn power transistors 2SC2591 2sc2592
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